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  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
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total: 42/810 IP Cores
    • 대학·연구소 IP
    • T

    A Gate-Body Floating NMOSFET with high holding voltage for High voltage esd protection in 0.18 Hynix BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1039 | 2020-08-04

    • 대학·연구소 IP
    • T

    A SCR based ESD Protection device with Dual-Directional using N-bridge region in 0.18 hynix process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1038 | 2020-08-04

    • 대학·연구소 IP
    • T

    A SCR based ESD Protection device with Dual-Directional and improved snapback performance in 0.18 hynix process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD p..

    KU302H1037 | 2020-08-04

    • 대학·연구소 IP
    • T

    A Dual Directional GBFNMOS based ESD Protection device with high holding voltage in 0.18 Hynix BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1036 | 2020-08-04

    • 대학·연구소 IP
    • T

    Dual Directional SCR based ESD Protection circuit with gate-biasing using skhynix 0.18um process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1033 | 2020-05-22