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Memory Element > SRAM
  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 4/798 IP Cores
    • 기업 IP
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    • M
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    128Kb Pseudo Dual Port Synchronous SRAM

    SDS2CSRAM_16Kx8 is 131,072-bit Pseudo Dual-Port Synchronous Static Random Access Memory with dual clocks. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static ..

    KC585H0881 | 2017-04-19

    • 기업 IP
    • N
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    16Mb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 16,777,216-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0876 | 2017-04-09

    • 기업 IP
    • N
    • M
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    128Kb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 131,072-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0875 | 2017-04-09

    • 기업 IP
    • N
    • M
    • T

    High Speed 4M SRAM

    4M SRAM bit cells which has 6 Transistor Access time from Clock to Data output is 18ns. Constant time is kept regardless of bit cell location in IP Minimize current consumption through the standby mode state after function operation. Suitable for Mixed Signal IC which needs the High speed SRAM IP.

    KC513H0533 | 2014-07-25