Search IP

Home > Search IP

IP Category

Browser by Category
Browser by Foundry
Browser by Technology

Select Category

Memory Element
  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 63/810 IP Cores
    • 기업 IP
    • N
    • M
    • T

    Embedded flash controller

    Embedded flash controller is designed to control embedded flash memory macro on the devices. This IP is based on AMBA AHB bus interface and configurable for buffer size and timing parameters

    KC145S0992 | 2019-01-22

    • 기업 IP
    • N
    • M
    • T

    EFUSE macro

    128bit eFUSE macro IP is proven on the Samsung LF6 technology platform

    KC145H0991 | 2019-01-21

    • 기업 IP
    • N
    • M
    • T

    128Kb Pseudo Dual Port Synchronous SRAM

    SDS2CSRAM_16Kx8 is 131,072-bit Pseudo Dual-Port Synchronous Static Random Access Memory with dual clocks. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static ..

    KC585H0881 | 2017-04-19

    • 기업 IP
    • N
    • M
    • T

    16Mb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 16,777,216-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0876 | 2017-04-09

    • 기업 IP
    • N
    • M
    • T

    128Kb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 131,072-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0875 | 2017-04-09