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  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 3/844 IP Cores
    • 대학·연구소 IP
    • P

    SCR-based ESD protection device with high holding voltage using segment topology for 150V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1047 | 2020-12-04

    • 대학·연구소 IP
    • P

    SCR-based ESD protection device with high holding voltage using N-drift region for 120V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1046 | 2020-12-04

    • 대학·연구소 IP
    • P

    NMOSFET-based ESD protection device with improved snapback using gate body floating technology for 100V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1045 | 2020-12-04