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  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 5/810 IP Cores
    • 대학·연구소 IP
    • T

    Vertical-type Hall-effect Sensor with delta-sigma modulator

    A current-mode Hall plate is designed as a vertical type to detect magnetic field parallel to the sensor surface, and the following trans-impedance and HPDSM are used to amplify and digitize the desired signal. The vertical-type Hall-effect sensor consists of a vertical-type Hall plate, a low noise transimpedance am..

    KU296H0976 | 2019-01-05

    • 대학·연구소 IP
    • T

    Delta-sigma modulator with hall plate

    The hall plate is designed as a cross-shaped structure, and the spinning current method is applied to separate the Hall voltage and the offset voltage of the hall plate. In addition, HPDSM is used to separate the offset voltage and 1 / f from the desired signal. The Delta-sigma modulator consist of third order Hig..

    KU296H0975 | 2019-01-02

    • 기업 IP
    • T

    Cross-shaped Hall Plates

    Hall Effect sensors, which are capable of measuring small changes in magnetic field, have a wide range of applications, including smart device, automotive, and consumer electronics. Their performance, size and low cost have made them the most popular type of magnetic devices. This is true since Hall sensors are easily ..

    KC054H0974 | 2018-12-26

    • 대학·연구소 IP
    • T

    CMOS Horizontal Hall device With Slotted Guard-Ring

    Horizontal hall device (HHD) detects a magnetic field varying in hall effect sensor. The CMOS based 90° symmetry cross-shaped Hall device advantages are as follows: high sensitivity, low cost, and its reliability. The hall device is realized by a N-well. The N-well is isolated from the substrate by p-n junction. The c..

    KU296H0839 | 2016-10-19

    • 대학·연구소 IP
    • T

    CMOS Horizontal Hall Device

    Horizontal hall device (HHD) detects a magnetic field varying in hall effect sensor. The CMOS based 90° symmetry cross-shaped Hall device advantages are as follows: high sensitivity, low cost, and its reliability. The hall device is realized by a N-well. The N-well is isolated from the substrate by p-n junction. In ad..

    KU296H0838 | 2016-10-19