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  • 기업 IP
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  • N관련된 신규용역가능
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total: 810/810 IP Cores
    • 대학·연구소 IP
    • T

    A New Dual-Direction SCR ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD p..

    KU302H1021 | 2019-12-09

    • 대학·연구소 IP
    • T

    A New Dual-Direction SCR with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1020 | 2019-12-09

    • 대학·연구소 IP
    • T

    A Dual-Direction SCR-based ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1019 | 2019-12-09

    • 대학·연구소 IP
    • P

    High Resolution Analog-Digital Converter for Gas Sensor Interface

    This discrete-time 3rd order delta-sigma analog-digital converter is supplied by 3.2V, and shows 16bit resolution. The measured effective number of bits(ENOB) is 13.2bit. The sampling rate is 500KS/s High SNDR is achieved by delta-sigma modulation, and this chip is based on TSMC 0.18um BCDMOS process. Die size is 1.17..

    KU296H1018 | 2019-11-28

    • 대학·연구소 IP
    • P

    Trans-impedance Amplifier for Gas Sensor Analog Front-end

    Transimpedance Ampllifier(TIA) amplifies current to voltage. Nested chopper technique, Weak Inversion design aloow low noise, low offset structure. In low frequency, the signal can be amplified in different ranges. TIA circuit is implemented in tsmcTM 0.18nm BCMMOS technology. Chip size is 1.175mm x 1.175mm. There ..

    KU296H1017 | 2019-11-28