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- 비즈니스 범위 표시
- N관련된 신규용역가능
- M수정/가공 판매가능
- T기술지원 가능
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- 대학·연구소 IP
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4H-SiC MOSFET-based 2-Stacked ESD prot..
The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP sy..
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- 대학·연구소 IP
- P
4H-SiC MOSFET-based 3-Stacked ESD prot..
The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP sy..
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- 대학·연구소 IP
- P
4H-SiC MOSFET-based 4-Stacked ESD prot..
The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP sy..
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- 대학·연구소 IP
- P
4H-SiC MOSFET-based ESD protection dev..
The circuit has effective ESD performance by using MOSFET based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP sy..
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